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? e-mail ? visit our web site: features both ptype and ntype low barrier silicon available low 1/f noise bonded junctions for reliability planar passivated beamlead and chip construction see also zero bias silicon schottky barrier detector diodes description alpha packaged, beamlead and chip schottky barrier detector diodes are designed for applications through 40 ghz in kaband. they are made by the deposition of a suitable barrier metal on an epitaxial silicon substrate to form the junction. the process and choice of materials result in low series resistance along with a narrow spread of capacitance values for close impedance control. ptype silicon is used to obtain superior 1/f noise characteristics. ntype silicon is also available. the packaged diodes are suitable for use in waveguide, coaxial, and stripline applications. the beamlead and chip diodes can also be mounted in a variety of packages or on special customer substrates. unmounted beamlead diodes are especially well suited for use in mic applications. mounted beamlead diodes can be easily used in mic, stripline or other such circuitry. the auniversal chipso are designed for a high degree of device reliability in both commercial and industrial uses. the offset bond pad assures that no mechanical damage will occur at the junction during the wire bonding. additionally the 4 mil bond pad eliminates performance variation due to bonding and is ideal for automated assembly, and improves efficiency during manual operations as well. the choice on ano and apo type silicon allows for the designer to optimize the silicon material for the intended application. doppler mixers, high sensitivity detectors will benefit from using the low noise characteristics of the apo type silicon. low conversion loss mixers and biased detectors can be designed using standard ano type material. silicon schottky barrier detector diodes
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? e-mail ? visit our web site: applications these diodes are categorized by tss (tangential signal sensitivity) for detector applications in four frequency ranges: s, x, ku, and kaband. however, they can also be used as modulators, high speed switches and low power limiters. rf parameters on chips and beamlead diodes are tested on a sample basis, while breakdown voltage and capacitance measurements are 100% tested. packaged diodes are 100% rf tested. tss is the one parameter that best describes a diode's use as a video detector. it is defined as the amount of signal power, below a one milliwatt reference level, required to produce an output pulse whose amplitude is sufficient to raise the noise fluctuations by an amount equal to the average noise level. tss is approximately 4 db above the minimum detectable signal. the schottky barrier diodes in this data sheet are of ptype construction and are optimized for low noise, particularly in the 1/f region. they require a small forward bias (to overcome the barrier potential) if efficient operation is required, especially at power levels below 20 dbm. bias not only increases sensitivity but also greatly reduces parameter variation due to temperature change. video impedance is a direct function of bias and closely follows the 28/l (ma) relationship. this is important to pulse fidelity, since the video impedance in conjunction with the detector output capacitance affects the effective amplifier bandwidth. bias does, however, increase noise, particularly in the 1/f region. therefore, it should be kept at as low a level as possible (typically 550 microamps). voltage output versus power input as a function of load resistance and bias is shown in figures 1a and 1b. assembly and handling procedure die attach methods all universal chips are compatible with both eutectic and conductive epoxy die attach methods. eutectic composition preforms of au/sn or au/ge are useful when soldering devices in circuit. gold/silicon eutectic die attach can be accomplished by scrubbing the chip directly to the gold plated bonding area. epoxy die attach with silver or gold filled conductive epoxies, can also be used where thermal heat sinking is not a requirement. wire bonding two methods can be used to connect wire, ribbon, or wire mesh to the chips: thermocompression ballbonding alpha recommends use of pure gold wire (0.7 1.25 mil diameter). silicon schottky barrier detector diodes
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? e-mail ? visit our web site: electrical specifications at 25 c apo type detectors beamlead electrical characteristics test conditions frequency band part number tss dbm 1,2 z if (ohms) gamma ( ) c j @ 0v (pf) v f @ 1 ma (mv) r t @ 10 ma (ohms) v b @ 10 m a (v) frequency ghz outline drawing number band number min. min. max. max. (mv) (ohms) (v) number x ku k ddb2503000 ddb2504000 ddb2265000 50 48 50 3 500 500 800 3 700 700 1200 3 0.15 0.10 0.10 200350 200350 300450 2 2 3 10 16 24.15 491006 491006 491006 chip ku k cdb7620000 cdb7619000 40 50 3 500 500 700 700 8000 5000 0.15 0.10 250350 300450 30 40 2 3 16 24.15 526006 526006 packaged diodes ku k x ku k k cdb7620207 cdb7619207 ddb2503250 ddb2504250 ddb2265250 ddb2265220 40 50 50 48 50 3 50 3 500 500 500 500 800 3 800 3 700 700 700 700 1200 3 1200 3 8000 5000 0.15 0.10 0.15 0.10 0.10 0.10 300350 300450 200350 200350 300450 300450 30 40 40 40 2 3 2 2 3 3 16 24.15 10 16 24.15 24.15 207 207 250 250 250 220 ano type detectors electrical characteristics frequency band part number drive level v f @ 1 ma (mv) c j @ 0v (pf) r t @ 10 ma (ohms) v b @ 10 ua (v) (mv) max. (ohms) (v) x cdf7623000 low 240300 0.30 10 2 k cdf7621000 low 270350 0.10 20 2 ku cme7660000 med 350450 0.15 10 3 k cde7618000 med 375500 0.10 20 3 ku cdp7624000 med/high 450575 0.15 15 3 1. bias = 50 m a. 2. video bandwidth = 10 mhz. 3. bias = 30 m a. 4. r v = 2800 ohms. silicon schottky barrier detector diodes 207 250 220
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? e-mail ? visit our web site: spice model parameters part number parameter unit cdf7621000 cdc7630000 cdb7619000 i s a 8e08 3e06 3e09 r s ohm 6 26 26 n 1.04 1.04 1.04 t d s 1e11 1e11 1e11 c j 0 pf 0.11 0.1 0.11 m 0.3 0.25 0.32 e g ev 0.69 0.69 0.69 v j 0.51 0.34 0.54 x ti 2 2 2 fc 0.5 0.5 0.5 b v v 2.5 2 3 ibv a 1e05 0.001 1e05 typical iv characteristics 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 v f (volts) 10 1 10 2 10 3 10 4 10 5 i (amps) f 10 6 cdf7621000 10 1 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 v f (volts) 10 2 10 3 10 4 10 5 i (amps) f 10 6 cdc7630000 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 v f (volts) 10 1 10 2 10 3 10 4 10 5 i (amps) f 10 6 cdb7619000 shipping information individual chips standard packaging procedures at alpha are for awafflepacko delivery. devices can also be packaged on agelpacko carriers. wafer shipment for whole wafer packaging options include delivery for devices on film frame where wafer is sawn on wafer gel pack for uncut, unsawn wafer. silicon schottky barrier dector diodes
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? e-mail ? visit our web site: typical performance data r l = 1k w r l = 10k w 0.10 1.00 10.00 100.00 1000.00 10000.00 30 20 10 0 10 20 r l = 1 w r l = 10 w r l = 100 w r l = 100k w r l = 1m w test conditions: f=9.375 ghz dc bias = 0 power input, dbm voltage output, mv figure 1a. voltage output vs. power input as a function of load resistance 0.10 1.00 10.00 100.00 1000.00 10000.00 30 20 10 0 10 20 test conditions: f=9.375 ghz power input, dbm voltage output, mv r l = 1k w r l = 10 w 5 m a 50 m a 5 m a 5 m a 50 m a r l = 1m w figure 1b. voltage output vs. power input as a function of load resistance and bias input video output load resistor dc return rf bypass a) unbiased input video output load resistor dc return rf bypass a) biased bias supply multi octavehigh sensitivity input video output load resistor rf bypass a) unbiased input video output load resistor rf bypass a) biased bias supply broadbandlow sensitivity 50 w figure 2. typical video detector circuits frequency table band frequencies (ghz) uhf l s c x ku k ka mm up to 1 1 2 2 4 4 8 8.2 12.4 12.4 18 18.0 26.5 26.5 40 40 100 silicon schottky barrier detector diodes
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? e-mail ? visit our web site: outline drawings 491006 526006, 526011 0.015 (0.38 mm) 0.013 (0.33 mm) 0.015 (0.38 mm) 0.013 (0.33 mm) diameter 0.0035 0.00 4 bonding pad (526006 cathode) 0.0085 (0.216 mm) 526006 = cathode bond pad 0.0065 (0.165 mm) 526011 = anode bond pad 526011 anode) silicon schottky barrier detector diodes

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